• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A light emitting module (10, 30, 40) comprises a semiconductor light emitting element (12, 32), an optical wavelength converting element (14) configured to convert the wavelength of the light element emitted by the semiconductor light emitting element and for emitting the converted light having a color different from that of the element light, a transmission element (16) disposed between the semiconductor light emitting element and the optical wavelength conversion element, and configured to allow the element lumen to be transmitted therethrough, the transmission element being made of a thermally conductive material which transfers to the the heat generated by the optical wavelength conversion element, and a transparent glue (18) connecting the optical wavelength conversion element and the transmissive element to each other; n, the adhesive having a thickness less than or equal to 20 microns.
    公开号:FR3022689A1
    申请号:FR1555746
    申请日:2015-06-23
    公开日:2015-12-25
    发明作者:Hisayoshi Daicho；Shogo Sugimori
    申请人:Koito Manufacturing Co Ltd；
    IPC主号:
    专利说明:

    [0001] BACKGROUND TECHNICAL FIELD The present invention relates to a light emitting module.
    [0002] ASSOCIATED TECHNIQUE A semiconductor light emitting device has been suggested using a semiconductor light emitting element such as a light emitting diode (LED) and a laser diode (DL). In addition, a method of producing a white light source by a combination of a semiconductor light emitting element and a phosphor has been devised in various ways (see Patent Documents 1 and 2). Patent Document 1: Japanese Patent Application No. 2008-305936 Patent Document 2: Japanese Patent Application No. 2009-289976 On the other hand, when the light emitted by the semiconductor light emitting element is subjected to a downward conversion by the phosphor, we can not avoid the occurrence of a Stokes shift ("Stokes loss" in English) due to energy conversion. Because of the Stokes shift, heat is generated by the phosphor and as a result, the temperature of the phosphor increases. In particular, when the brightness is increased with the improved performance of the semiconductor light emitting element, the amount of heat generated by the phosphor is further increased. A suitable heat dissipation measurement is therefore necessary. SUMMARY Embodiments of the invention provide a light emitting module with improved heat dissipation. A light emitting module according to an exemplary embodiment comprises: a semiconductor light emitting element; an optical wavelength conversion element configured to convert the wavelength of the element light emitted by the semiconductor light emitting element and to emit the converted light having a color different from that of the element light; a transmission element disposed between the semiconductor light emitting element and the optical wavelength converting element, and configured to allow the element light to be transmitted therethrough, the transmission element being made of a thermally conductive material which transfers to the outside the heat generated by the optical wavelength conversion element; and a transparent glue connecting the optical wavelength conversion element and the transmission element to each other, the glue having a thickness of less than or equal to 20 μm. The term "element light" means the light emitted by the semiconductor light emitting element and the term "converted light" means light whose wavelength has been converted. According to this aspect, the heat generated by the optical wavelength conversion element when the wavelength of the element light emitted by the semiconductor light emitting element is converted can be dissipated outwardly. via the transmission member 20 made of a thermally conductive material. The transmission element may have a light transmittance greater than or equal to 40% and a thermal conductivity greater than or equal to 10 W / (m · K). The semiconductor light emitting element can emit ultraviolet light or short wavelength visible light. Even in the case where such a semiconductor light emitting element is used, the degradation of the glue can be reduced when the glue is made for example of dimethyl silicone. The semiconductor light emitting element may be a laser diode and the transmitting element may be disposed at a location which is spaced from the light emitting portion of the semiconductor light emitting element. Since the laser diode and the transmission element are arranged to be spaced apart, the oscillation of the laser diode is effectively performed.
    [0003] The transmission element may be made of a material having a higher thermal conductivity than the optical wavelength conversion element. In this way, the heat of the optical wavelength conversion element can be effectively transferred to the transmission element. According to the present invention, it is possible to improve the heat dissipation of the light emitting module. BRIEF DESCRIPTION OF THE DRAWINGS The invention will be better understood and its advantages will be better understood on reading the detailed description which follows. The description refers to the following drawings given by way of example. Figure 1 is a view showing a schematic configuration of a light emitting module according to a first embodiment.
    [0004] Fig. 2 is a view showing a schematic configuration of a light emitting module according to a second embodiment. Fig. 3 is a view showing a schematic configuration of a light emitting module according to a third embodiment. DETAILED DESCRIPTION Preferred embodiments of the present invention will be described hereinafter with reference to the drawings. The same or similar elements, members, and processes shown in each of the drawings are represented by like or similar reference numerals and the repetition of their description will be omitted as appropriate. In addition, the embodiment is explanatory and is not intended to limit the present invention. It will be appreciated that all features and combinations thereof described in the embodiment are not necessarily considered an essential part of the present invention. [First Embodiment] (Light Emitting Module) Fig. 1 is a view showing a schematic configuration of a light emitting module 10 according to a first embodiment. The light emitting module 10 comprises a semiconductor light emitting element 12, an optical wavelength converting element 14, a transmission element 16 and a transparent adhesive 18. The length conversion element Optical wave 14 converts the wavelength of the element light emitted by the semiconductor light emitting element 12 and emits the converted light having a different color from that of the element light. The transmission element 16 is disposed between the semiconductor light emitting element 12 and the optical wavelength conversion element 14 and allows the element light to be transmitted therethrough. The glue 18 is provided for connecting the optical wavelength conversion element 14 and the transmission element 16 to each other. The transmission element 16 is made of a thermally conductive material which transfers to the outside the heat generated by the optical wavelength conversion element 14.
    [0005] The semiconductor light emitting element 12 according to the present embodiment is mounted on a mounting substrate 20. In addition, a heat sink 22 is provided on an edge of the mounting substrate 20. The heat sink 22 dissipates to the outside the heat generated by the semiconductor light emitting element 12 or the optical wavelength converting element 14. As the heat sink 22, highly conductive aluminum or copper is prefer. The heat sink 22 has a clamping portion 22a for holding the outer edge of the transmission member 16. The upper region of the heat sink 22 surrounding the optical wavelength converting element 14 is configured as an inclined surface 22b. A reflective film 24 is provided on the inclined surface 22b. Reflective film 24 reflects forward (upward in FIG. 1) the light emitted to the side from the optical wavelength converting element 14 of the light emitting module 10, so that the brightness of the light emitting module 10 can be improved. As the reflective film 24, a metal film with a high reflectivity, for example aluminum or copper, or a white film with a high diffusion reflectivity, for example aluminum or titanium, is preferred.
    [0006] In this way, in the light emitting module 10 according to the present embodiment, the optical wavelength converting element 14 is provided on the transmission element 16 with a high thermal conductivity, the light of the light emitter The element of the semiconductor light emitting element 12 is incident from a transmission element side bearing surface of the optical wavelength conversion element 14 and the light is mainly emitted by an emitting surface 14a of the conversion element 14 at the front of the light emitting module. At this time, the element light emitted by the semiconductor light emitting element 12 and the converted light whose wavelength is converted by the optical wavelength conversion element 14 are mixed together. , so that light having a desired color (eg, white color) is created. The light created in this manner is radiated to the front of the light emitting module 10. (Semiconductor light emitting element) As a semiconductor light emitting element 12, for example, an InGaAs LED element for to emit ultraviolet radiation or short wavelength visible light (near ultraviolet light to blue light) is used. Further, it is preferable that the light emitted by the semiconductor light emitting element 12 is ultraviolet radiation or short wavelength visible light having a peak wavelength in the region of the wavelengths. wave of 365 to 470 nm (preferably 380 to 430 nm). Since the light emitting element is capable of emitting ultraviolet radiation or short wavelength visible light, the light emitting element may be a different element of the LED element or may be a DL element or an EL element. Further, given the amount of light or the range of radiation, a plurality of semiconductor light emitting elements 12 may be used in the light emitting module 10. (Optical wavelength conversion element As an optical wavelength conversion element 14, for example, a phosphor layer can be used. The phosphor layer comprises (i) a plate-shaped sintered body formed by sintering a powdered phosphor, (ii) a phosphor film formed by densely packing a powdery phosphor in a transparent binder, and (iii) ) a single crystal of the phosphor, etc. As the material of the phosphor, the following luminophores may be mentioned as examples. These phosphors emit light when excited by ultraviolet (ultraviolet) light or short-wave visible light. (1) YAG: Ce3 + (2) (Cal-xSrx) 7 (SiO3) 6Cl2: Eu2 + 10 (3) (Ca, Sr) s (PO4) 3Cl: Eu2 + (4) (Ca, Sr) SiAl N3: Eu2 + ( 5) [3-SiAION (6) a-SiAION In addition, the type of phosphor is not limited to one type. For example, basically, a yellow phosphor and a blue phosphor are combined when the semiconductor light emitting element 12 is a purple LED element. However, a red or green phosphor can be suitably combined in view of the color rendering properties or the color temperature required for the radiation light. Further, in the case where a blue LED element is used as a semiconductor light emitting element 12, only the yellow phosphor can be used or the blue phosphor content can be relatively small, compared to the yellow phosphor.
    [0007] The optical wavelength conversion element 14 according to the present embodiment has a shape such that the area A1 of the emitting surface 14a at the front of the light emitting module 10 becomes wider than the area A2 of the lateral surface surrounding the emitting surface 14a. In this way, it is possible to reduce the light emitted from the side of the optical wavelength conversion element 14. (Transmission element) The transmission element 16 is preferably a transparent substrate with a conductivity high thermal. "Transparent substrate" refers here to a substrate whose absorption in the wavelength region (380 to 780 nm) of visible light is low and for example, the light transmittance is greater or 40%, preferably greater than or equal to 60%, more preferably greater than or equal to 80%. Further, the transmission member 16 may be made of a material with a thermal conductivity greater than or equal to 10 W / (mK) or preferably greater than or equal to 30 W / (mK) even more preferably greater than or equal to 100 W / (mK). Specifically, a polycrystalline material or a monocrystalline material, for example, diamond, SiC, GaN, MgO, sapphire and YAG, may be cited as an example.
    [0008] As described above, in the semiconductor light emitting device using the wavelength conversion by means of the optical wavelength conversion element 14 such as the phosphor, heat is generated due to of Stokes displacement by the downconversion of the optical wavelength conversion element 14 and accordingly, the temperature of the optical wavelength conversion element 14 increases. On the other hand, a cooling of the temperature of the optical wavelength conversion element 14 occurs with the temperature rise. The heat generated by the optical wavelength conversion element 14 when the wavelength of the element light emitted by the semiconductor light emitting element 12 is converted can be dissipated to the outside by via the transmission member 16 makes the thermally conductive material as described above. As a result, it is possible to improve the heat dissipation of the light emitting module 10. On the other hand, the transmission element 16 is made of a material having a higher thermal conductivity than the heat transfer element. Accordingly, the heat of the optical wavelength conversion element 14 can be effectively transferred to the transmission element 16. (Glue) The glue 18 is used to link directly to each other the optical wavelength conversion element 14 and the transmission element 16 or to indirectly link the optical wavelength conversion element 14 and the transmission element 16 through another element. The glue 18 may be suitably chosen given the strength of bonding or durability, etc. For example, a sol-gel silica glass, a sol-gel titanium glass, a dimethyl silicone, etc. can be used. In addition, the thickness of the layer made of glue 18 is, for example, less than or equal to 20 μm, more preferably less than or equal to 3 μm. In this way, since it is possible to form a thin layer as an adhesive 18, the heat is easily transferred from the optical wavelength converting element 14 to the transmission element 16. By using the dimethyl silicone as glue 18, the degradation of the glue can be reduced even when the light emitted by the semiconductor light emitting element 12 is ultraviolet light or short wavelength visible light. Thus, dimethyl silicone is a material having a good balance in terms of degradation due to ultraviolet light or the like, thermal resistance and transmittance, etc. On the other hand, the optical wavelength conversion element 14 and the transmission element 16 can be directly bonded to each other without the use of glue. As a binding method, for example, room temperature bonding, plasma bonding and anodic bonding, etc., may be exemplified. In addition, the semiconductor light emitting element 12 and the transmission element 16 may be bonded to one another using glue 18 or a heat transfer element, etc. In this way, the heat generated by the semiconductor light emitting element 12 can also be dissipated to the outside via the transmission element 16. (Mounting substrate) As a mounting substrate 20 for mounting the semiconductor light emitting element 12, a metal substrate (aluminum substrate, copper substrate, etc.), a ceramic substrate (alumina substrate, aluminum nitride substrate, etc.), a resin substrate (epoxy glass substrate, etc.), a leadframe, an integrated leadframe with a resin frame, a flexible substrate (FPC), etc., may be exemplified. The substrate is chosen in view of thermal conductivity, electrical insulation and cost, etc. [Second Embodiment] FIG. 2 is a view showing a schematic configuration of a light emitting module 30 according to a second embodiment. The same components as in the first embodiment are here represented by the same reference numerals and their description is omitted as appropriate. The light emitting module 30 comprises a semiconductor light emitting element 32, the optical wavelength converting element 14, the transmitting element 16 and the transparent adhesive 18. The optical waveform 14 converts the wavelength of the element light emitted by the semiconductor light emitting element 32 and emits converted light having a different color from that of the element light. The transmission element 16 is disposed between the semiconductor light emitting element 32 and the optical wavelength conversion element 14 and allows the element light to be transmitted therethrough. Glue 18 is provided for bonding the optical wavelength conversion element 14 and the transmission element 16 to each other. The outer edge of the transmission element 16 is held in a housing 34 The housing also serves as a heat sink. The housing 34 is made of a material that is lightweight and has good thermal conductivity. As a material of the case 34, for example, a metallic material for example aluminum, magnesium, titanium, iron, copper, stainless steel, silver or nickel or plastic with a high thermal conductivity, in which are mixed charges with good thermal conductivity is preferred. As a semiconductor light emitting element 32 according to the second embodiment, a GaN DL element for emitting ultraviolet radiation or short-wave visible light (near-ultraviolet light with blue light ) is used. Further, it is preferable that the light emitted by the semiconductor light emitting element 32 is ultraviolet radiation or short wavelength visible light, having a peak wavelength in the region of the wavelengths. wave ranging from 365 to 470 nm (preferably from 380 to 430 nm). Further, the transmission member 16 is disposed at a location spaced from the light emitting portion 32a of the semiconductor light emitter element 32. In this manner, air (n = 1 ) with a low refractive index (n) is present at the front of the light emitting portion 32a of the semiconductor light emitting element 32 which is an element of DL. That is, the difference in refractive index between the air and the GaN material (n = 2.3 to 2.5) constituting a DL element increases, so that the oscillation of the laser diode is actually performed. Further, in the optical wavelength conversion element 14 according to the second embodiment, the reflective film 24 is provided on the side 14b of the vicinity of the light emitting surface 14a. The reflective film 24 reflects the converted light, which is generated in the optical wavelength conversion element 14 and directed towards the side 14b, forwards (upward in FIG. In this way, it is possible to improve the brightness of the light emitting module 30. Thus, in the case where the element of DL is used as a semiconductor light emitting element 32, the Radiation region of the element lumen may be narrowed, relative to the use case of the LED element. As a result, it is possible to improve the brightness. On the other hand, since the element lumen is concentrated on the narrow region of the optical wavelength conversion element 14, the heat generated in the radiation region is increased. Accordingly, the light emitting module 30 is configured so that the heat in the optical wavelength converting element 14 is transferred to the housing 34 via the transmission element 16. , the heat dissipation is improved. [Third Embodiment] Fig. 3 is a view showing a schematic configuration of a light emitting module 40 according to a third embodiment. The light emitting module according to the third embodiment is characterized in that a short-time filter is provided in the light emitting module according to the second embodiment. Accordingly, the same components as in the second embodiment are represented by the same reference numerals and their description is omitted as appropriate.
    [0009] A short-range filter 42 is formed on the side of the transmission element 16 of the light emitting module 40 facing the optical wavelength conversion element 14. optical wavelength conversion element 14 is connected to the transmission element 16 having the short-term filter 42 by means of the glue 18. The light converted into the optical wavelength conversion element 14 generally has a wavelength greater than that of the element lumen of the semiconductor light emitting element 32. In addition, since the light converted by the phosphor is lambertian light, a portion of the light is directed to the semiconductor light emitting element 32. The element light of the semiconductor light emitting element 32 can be transmitted through the short-term filter 42 and the light converted into the conversion element. An optical wavelength 14 is not transmitted but is reflected by the short-range filter 42. By using the short-time filter 42 thus configured, it is possible to realize a light emitting module with a larger size. brightness. On the other hand, the layout position of the short-range filter 42 is not limited to the configuration of FIG. 3. The short-range filter 42 may be formed on the impact side 14c of the In this case, the transmission element 16 is connected to the optical wavelength conversion element 14 comprising the short-range filter 42 by means of the glue 18. The invention has been described so far with reference to each explanatory embodiment described above. However, the present invention is not limited to these explanatory embodiments. An appropriate combination or replacement of the configuration of each illustrative embodiment is also intended to be included in the present invention. Furthermore, based on the knowledge of those skilled in the art, the combination of the processing order in each explanatory embodiment can be appropriately modified or modified such that various design variants can be added to each explanatory embodiment. An explanatory embodiment to which such a modification is added may also be included within the scope of the present invention.
    权利要求:
    Claims (5)
    [0001]
    REVENDICATIONS1. Light emitting module (10, 30, 40) characterized by comprising: a semiconductor light emitting element (12, 32); an optical wavelength conversion element (14) configured to convert the wavelength of the element light emitted by the semiconductor light emitting element and to emit the converted light having a color different from that of element light; a transmission element (16) disposed between the semiconductor light emitting element and the optical wavelength conversion element, and configured to allow the element light to be transmitted therethrough, the transmission element being made of a thermally conductive material which transfers to the outside the heat generated by the optical wavelength conversion element; and a transparent adhesive (18) connecting the optical wavelength conversion element and the transmission element to each other, the adhesive having a thickness of less than or equal to 20 μm.
    [0002]
    The light emitting module according to claim 1, wherein the transmitting element has a light transmittance greater than or equal to 40% and a thermal conductivity greater than or equal to 10 W / (m · K). 25
    [0003]
    The light emitting module according to claim 1 or 2, wherein the semiconductor light emitting element emits ultraviolet light or short wavelength visible light.
    [0004]
    The light emitting module according to any of claims 1 to 3, wherein the semiconductor light emitting element is a laser diode (32), and the transmitting element is disposed at a location which is spaced apart. of the light emitting part of the semiconductor light emitting element.
    [0005]
    The light emitting module according to any one of claims 1 to 4, wherein the transmitting member is made of a material having a higher thermal conductivity than the length conversion element. optical wave.
    类似技术:
    公开号 | 公开日 | 专利标题
    FR3022689A1|2015-12-25|LIGHT EMITTING MODULE
    JP6460162B2|2019-01-30|Method for manufacturing wavelength converter
    JP6371201B2|2018-08-08|Light emitting module and light emitting device using the same
    KR20100109561A|2010-10-08|Optoelectronic module and projection device comprising the optoelectronic module
    FR2864879A1|2005-07-08|Electroluminescent module incorporating a semiconductor unit and luminescent nanoparticles for a lighting unit of a vehicle
    FR3051887B1|2019-10-18|LIGHT EMITTING DEVICE
    WO2004109814A1|2004-12-16|Optical transmitter
    WO2006049757A2|2006-05-11|Led package with front surface heat extractor
    JP6816007B2|2021-01-20|Wavelength conversion element, light emitting device, and manufacturing method of wavelength conversion element
    JP2005043853A|2005-02-17|Optical part and optical isolator provided with it
    WO2017056470A1|2017-04-06|Wavelength conversion element and light emitting device
    JP2006278567A|2006-10-12|Led unit
    EP3476013B1|2019-09-18|Laser-based light source with heat conducting outcoupling dome
    TW201517321A|2015-05-01|Semiconductor light emitting device
    CN103180975A|2013-06-26|Semiconductor light-emitting diode chip, light-emitting device, and manufacturing method thereof
    JP2014086566A|2014-05-12|Optical wavelength conversion device
    FR2885455A1|2006-11-10|RETURNED CHIP ELECTROLUMINESCENT DIODE WITHOUT SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME
    JP6627914B2|2020-01-08|Fluorescent member, optical component, and light emitting device
    TW200849645A|2008-12-16|Semiconductor light emitting device
    JP5748007B2|2015-07-15|Light emitting device
    FR3004238A1|2014-10-10|LIGHT EMITTING DEVICE COMPRISING A THERMAL DISSIPATOR OF AN EMISSIVE COMPONENT DEPORTING FROM THE BACK OF A REFLECTOR
    JP2012516047A|2012-07-12|Optoelectronic semiconductor component and method for manufacturing optoelectronic semiconductor component
    JP2019184644A|2019-10-24|Light wavelength conversion member and light-emitting device
    Kaepplinger et al.2019|An innovative Si package for high-performance UV LEDs
    JP2007317956A|2007-12-06|Light-emitting device
    同族专利:
    公开号 | 公开日
    FR3022689B1|2018-03-16|
    CN105280801A|2016-01-27|
    US20150372198A1|2015-12-24|
    JP2016009761A|2016-01-18|
    DE102015211398A1|2016-01-07|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    KR101131410B1|2005-02-23|2012-04-13|미쓰비시 가가꾸 가부시키가이샤|Semiconductor light emitting device member, method for manufacturing such semiconductor light emitting device member and semiconductor light emitting device using such semiconductor light emitting device member|
    JP5233172B2|2007-06-07|2013-07-10|日亜化学工業株式会社|Semiconductor light emitting device|
    JP5432922B2|2008-01-22|2014-03-05|コーニンクレッカフィリップスエヌヴェ|Illumination device comprising an LED and a transmissive support having a luminescent material|
    JP2009289976A|2008-05-29|2009-12-10|Nichia Corp|Light emitting device|
    DE102008057140A1|2008-11-13|2010-05-20|Osram Opto Semiconductors Gmbh|Optoelectronic component|
    US20100207511A1|2009-02-19|2010-08-19|Mitsunori Harada|Semiconductor light emitting device|
    US9500325B2|2010-03-03|2016-11-22|Cree, Inc.|LED lamp incorporating remote phosphor with heat dissipation features|
    WO2012014360A1|2010-07-26|2012-02-02|株式会社小糸製作所|Light-emitting module|
    KR101906863B1|2011-03-07|2018-10-11|루미리즈 홀딩 비.브이.|A light emitting module, a lamp, a luminaire and a display device|US20170137328A1|2014-06-18|2017-05-18|Osram Sylvania Inc.|Method of making a ceramic wavelength converter assembly|
    JP6782551B2|2016-03-28|2020-11-11|シチズン時計株式会社|LED light emitting device|
    KR20170121570A|2016-04-25|2017-11-02|엘지이노텍 주식회사|Lighting apparatus|
    JP6493308B2|2016-05-31|2019-04-03|日亜化学工業株式会社|Light emitting device|
    CN109838751A|2017-11-27|2019-06-04|深圳市绎立锐光科技开发有限公司|Light-source system and the car headlight device for using the light-source system|
    JP6702349B2|2018-03-27|2020-06-03|日亜化学工業株式会社|Light emitting device|
    JP6879290B2|2018-12-26|2021-06-02|日亜化学工業株式会社|Light emitting device|
    US11205886B2|2019-03-12|2021-12-21|Nichia Corporation|Method of manufacturing optical member, optical member, and light emitting device|
    CN113917777A|2020-07-09|2022-01-11|成都极米科技股份有限公司|Light source equipment and projection display equipment|
    法律状态:
    2016-05-13| PLFP| Fee payment|Year of fee payment: 2 |
    2017-05-11| PLFP| Fee payment|Year of fee payment: 3 |
    2017-08-25| PLSC| Publication of the preliminary search report|Effective date: 20170825 |
    2018-05-07| PLFP| Fee payment|Year of fee payment: 4 |
    2020-05-12| PLFP| Fee payment|Year of fee payment: 6 |
    优先权:
    申请号 | 申请日 | 专利标题
    JP2014129541A|JP2016009761A|2014-06-24|2014-06-24|Light emitting module|
    JP2014129541|2014-06-24|
    [返回顶部]